Standard PE-CVD System Manufacturers,Standard PE-CVD System Suppliers

Description

Features Plasma Enhanced Chemical Vapor Deposition(PECVD) is a process used to deposit thin films from a gas state(vapor) to a solid state on some substrate. There are some chemical reactions involved in the process which occur after creation of a plasma of the reacting gases. Application SiOx, SixNy, a-Si etc. Passivisation, isolation Solar Cell Device Specifications Substrate Size : 6inch Max. Temperature : 700°C(On Heater) Substrate to Gas Nozzle Distance : 30mm ~ 100mm Adjustable(Manual) Power Source : RF 13.56MHz Gas Flow SystemFlow Control Range : 0~100 sccmGas : SiH4, NH3, N2O, Ar, O2, CHF3(For Cleaning) Gas Scrubber Film Thickness Uniformitywithin wafer : <±5% within 6inch waferRun to Run : < ±5% Ultimate Pressure : <1 x 10-5 Torr within 10min

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