Features
Plasma Enhanced CVD is an excellent alternative for depositing a variety of thin films at lower temperature than those utilized in CVD reactors without setting for a lesser film quality. PECVD uses electrical energy to generate a glow Discharge(Plasma) in which the energy is transferred into a gas Mixture. Some of the desirable properties of PECVD films are good adhesion, low pinhole density, Good step coverage, and uniformity.
Specifications
Sample Size : 150mm x 150mm
Power Source : RF 13.56MHz, VHF 60MHz
Deposition Type : PECVD, VHFCVD
Plasma Type : Direct Plasma
Substrate Temperature : Max. 450°C
Temperature Uniformity : ± 3°C
High Vacuum Pumping(Rotary + TMP + Booster)
Ultimate Pressure : 5 x 10-6 torr within 60min
Full Automation Control System Using PC Interface
R&D Total Solution for Solar Application
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