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Multi-functional cluster system combined with PECVD, sputter and E-beam evaporation for high quality graphene synthesis.
Special Features
Multi-functional cluster system combined with PECVD, sputter and E-beam evaporation for high quality graphene synthesis.
Maximum substrate heater temperature: 1,000°C for PECVD, 800°C for Sputter and
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Optical devices
Barrier layer
Solar cell
Special Features
High density PECVD system for a-Si:H and nc-Si:H layer.
Low temperature deposition of a-Si:H layer(under about 300°C).
Robot transporting system.
Specifications
Wafer capacity : 1 × 4"
Average throughput : Up to 5,000 wafers per year
Dimension : 2,100L × 1,700H ×
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SiNx dielectric material coating
SiOx dielectric material coating
SiOxNy dielectric material coating
Special Features
Capacitively-Coupled PECVD system with loadlock chamber for R&D and small scale production.
Automatic loadlock system with cassette.
Uniform gas distribution through shower head.
Specifications
Substrate temperature
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CNTs growth
Special Features
Small RF-PECVD system for CNT(Carbon Nano Tube) synthesis.
Low temperature synthesis of CNTs(under about 400°C).
Specifications
Heating range : 400 ~ 600°C
Average throughput : Up to 5,000 wafers per year
Wafer capacity : 1 × 4"
Dimension : 1,100L × 1,500H × 900W (mm3)
Power : AC 100W
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Optical waveguide
Barrier layer
Special Features
SiO2 PECVD system for R&D and small scale production.
Excellent thickness and reflective index uniformity in deposited layer (avg. 7µm).
Highly smooth surface(RMS roughness of deposited layer : 30.6Ã…).
Transformer coupled high density plasma.
Specifications
Wafer capacity : 1 ×
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Graphene synthesis
Special Features
Multi-functional CVD system combined with ICP CVD and probe station.
Maximum substrate temperature: 1,000°C.
Automatic loading available during susceptor heating.
High density plasma source.
PC-control system.
Specifications
Wafer capacity : 6" wafer x 1
Average throughput: 4,800
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OLED barrier layers(ex. SiOx, SiNx, SiONx, etc)
Special Features
SiOx and SiNx rf-PECVD system for R&D and small scale production.
Designed to be compatible with OLED cluster system.
Transformer-coupled high density plasma source.
System and process controlled automatically by PC.
Specifications
Substrate : 100x100mm2, 150x150mm2
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Plasma modifications and PECVD of injection mold surface for forming automobile plastic parts.
Low friction and wear-resistant applications using plama nitriding and DLC deposition to various types of metal products.
Special Features
Batch type of large area plasma treatment, plasma nitriding & PECVD system.
(chamber size: ID:2,100mm,
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[Product Description]:
PECVD ACL equipment is essential for the front end process of semiconductor manufacturing. It deposits an Amorphous Carbon Layer(ACL) on the surface of a wafer by generating the plasma in a vacuum chamber.
TES is the first and only local equipment manufacturer that successfully adopted PECVD ACL equipment for mass
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ECV controls the discharge of the Variable Compressor of the cooling cycle of the automobile A/C system. ECV receives the electrical signal [0-1.0A] from ECU and supplies of the flow (refrigerant) of discharge pressure [Pd] to the swashplate control case by proportional control using the suction pressure[Ps] / discharge pressure[Pd] of the
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DCV (Discharge Check Valve) prevents the external movement of the refrigerant inside the variable swashplate compressor up to certain pressure level to maintain the swashplate at 0° when the variable compressor does not operate and to avoid performance degradation during
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The valve was developed as cost-effective compared to existing models by improving the assembly method and changing the material [Brass -> PA46]. The valve shuts off the oil flow when the air-conditioner of the Variable Compressor is OFF with improved noise by assembling the SDD (Suction Damping Device) in the Rear Head Suction