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Metal, oxide, magnetic materials etching
Special Features
Inductively-Coupled ICP-CVD system with loadlock chamber for R&D and small Scale production.
Automatic robot transporting system.
Specifications
Dimension : 1,370L × 1,970.2H × 931W (mm3)
Wafer capacity : 1 × 4", 1 × 6"
Heater : 6", -60°C LN2 Cooling
Exhaust : Wet
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Metal etching, Silica etching, Polymer etching
Special Features
TCP etching system with 3 chambers for R&D and small scale production.
Automatic robot transporting system.
ESC (Electro Static Chuck) and He cooling system for silica etching.
Average throughput Up to 250,000 wafers per year.
Specifications
Wafer capacity : 1 ×
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Metal, oxide, magnetic materials etching
Special Features
TCP etching system for R&D and small scale production.
Automatic robot transporting system.
Mechanical chuck and He backside cooling system.
Specifications
Average throughput : Up to 14,400 wafers per year
Wafer capacity : 1 × 4"
Dimension : 1,100L × 1,830H × 900W