Optical device
Optical wave guide
Passivation layer
Special Features
RF sputtering system for R&D and small scale production.
Excellent thickness uniformity and surface morphology in deposited layers.
Silicon and reactive silicon oxide deposition.
Automatically movable substrate holder.
Specifications
Wafer capacity : 1 x 6"
Average throughput Up to 5,000 wafers per year
Dimension : 1,730L x 1,277H x 725W (mm3)
Power : AC 1.2kW (13.56MHz)
AC 600W (13.56MHz)
DC 1kW (optional)
Gas : Ar / O2
Heater : silicon carbide(heating rate: 40°C/min, max. temp.: 850°C, deviation: negligible)
Pump : rotary(600l/mim) & cryogenic(900l/s)
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