RF Sputtering System with 2x7 and 2x4 Guns

RF Sputtering System with 2x7 and 2x4 Guns

RF Sputtering System with 2x7 and 2x4 Guns Made in Korea

Description

Optical device

Optical wave guide

Passivation layer

Special Features

RF sputtering system for R&D and small scale production.

Excellent thickness uniformity and surface morphology in deposited layers.

Silicon and reactive silicon oxide deposition.

Automatically movable substrate holder.

Specifications

Wafer capacity : 1 x 6"

Average throughput Up to 5,000 wafers per year

Dimension : 1,730L x 1,277H x 725W (mm3)

Power : AC 1.2kW (13.56MHz)

AC 600W (13.56MHz)

DC 1kW (optional)

Gas : Ar / O2

Heater : silicon carbide(heating rate: 40°C/min, max. temp.: 850°C, deviation: negligible)

Pump : rotary(600l/mim) & cryogenic(900l/s)


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