Optical waveguide
Barrier layer
Special Features
SiO2 PECVD system for R&D and small scale production.
Excellent thickness and reflective index uniformity in deposited layer (avg. 7µm).
Highly smooth surface(RMS roughness of deposited layer : 30.6Å).
Transformer coupled high density plasma.
Specifications
Wafer capacity : 1 × 4"
Average throughput : Up to 5,000 wafers per year
Dimension : 1,730L × 1,277H × 725W (mm3)
Power : AC 1.2kW for TCP source(13.56MHz)
AC 600W for bias voltage(13.56MHz)
Gas : SiH4 / O2
Susceptor material : graphite
Heater : silicon carbide(heating rate: 40°C/min, max. temp.: 800°C, temp. deviation : negligible)
Pump : rotary(600 l/min) & turbo( 500 l/s)
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