PECVD System with High Density Plasma

PECVD System with High Density Plasma

PECVD System with High Density Plasma Made in Korea

Description

Optical waveguide

Barrier layer

Special Features

SiO2 PECVD system for R&D and small scale production.

Excellent thickness and reflective index uniformity in deposited layer (avg. 7µm).

Highly smooth surface(RMS roughness of deposited layer : 30.6Å).

Transformer coupled high density plasma.

Specifications

Wafer capacity : 1 × 4"

Average throughput : Up to 5,000 wafers per year

Dimension : 1,730L × 1,277H × 725W (mm3)

Power : AC 1.2kW for TCP source(13.56MHz)

AC 600W for bias voltage(13.56MHz)

Gas : SiH4 / O2

Susceptor material : graphite

Heater : silicon carbide(heating rate: 40°C/min, max. temp.: 800°C, temp. deviation : negligible)

Pump : rotary(600 l/min) & turbo( 500 l/s)


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