CNTs growth
Special Features
Small RF-PECVD system for CNT(Carbon Nano Tube) synthesis.
Low temperature synthesis of CNTs(under about 400°C).
Specifications
Heating range : 400 ~ 600°C
Average throughput : Up to 5,000 wafers per year
Wafer capacity : 1 × 4"
Dimension : 1,100L × 1,500H × 900W (mm3)
Power : AC 100W (13.56MHz)
Gas : NH3/C2H2/Ar/O2/N2
Heater : silicon carbide(heating rate: 40°C/min, max. temp.:850°C, deviation: negligible)
Pump : rotary(600 l/min)
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