PECVD System for Low Temp. CNTs Synthesis

PECVD System for Low Temp. CNTs Synthesis

PECVD System for Low Temp. CNTs Synthesis Made in Korea

Description

CNTs growth

Special Features

Small RF-PECVD system for CNT(Carbon Nano Tube) synthesis.

Low temperature synthesis of CNTs(under about 400°C).

Specifications

Heating range : 400 ~ 600°C

Average throughput : Up to 5,000 wafers per year

Wafer capacity : 1 × 4"

Dimension : 1,100L × 1,500H × 900W (mm3)

Power : AC 100W (13.56MHz)

Gas : NH3/C2H2/Ar/O2/N2

Heater : silicon carbide(heating rate: 40°C/min, max. temp.:850°C, deviation: negligible)

Pump : rotary(600 l/min)


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